Automatic sampling of hot phosphoric acid for the determination of chemical element concentrations and control of semiconductor processes

ABSTRACT

Systems and methods for automatic sampling of a sample for the determination of chemical element concentrations and control of semiconductor processes are described. A system embodiment includes a remote sampling system configured to collect a sample of phosphoric acid at a first location, the remote sampling system including a remote valve having a holding loop coupled thereto; and an analysis system configured for positioning at a second location remote from the first location, the analysis system coupled to the remote valve via a transfer line, the analysis system including an analysis device configured to determine a concentration of one or more components of the sample of phosphoric acid and including a sample pump at the second location configured to introduce the sample from the holding loop into the transfer line for analysis by the analysis device.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims the benefit under 35 U.S.C. §119(e) ofU.S. Provisional Application Ser. No. 62/264,740, filed Dec. 8, 2015,and titled “AUTOMATIC SAMPLING OF HOT PHOSPHORIC ACID FOR THEDETERMINATION OF CHEMICAL ELEMENT CONCENTRATIONS AND CONTROL OFSEMICONDUCTOR PROCESSES.” U.S. Provisional Application Ser. No.62/264,740 is herein incorporated by reference in its entirety.

BACKGROUND

Spectrometry refers to the measurement of radiation intensity as afunction of wavelength to identify component parts of materials.Inductively Coupled Plasma (ICP) spectrometry is an analysis techniquecommonly used for the determination of trace element concentrations andisotope ratios in liquid samples. For example, in the semiconductorindustry, ICP spectrometry can be used to determine metal concentrationsin samples. ICP spectrometry employs electromagnetically generatedpartially ionized argon plasma which reaches a temperature ofapproximately 7,000K. When a sample is introduced to the plasma, thehigh temperature causes sample atoms to become ionized or emit light.Since each chemical element produces a characteristic mass or emissionspectrum, measuring the spectra of the emitted mass or light allows thedetermination of the elemental composition of the original sample. Thesample to be analyzed is often provided in a sample mixture.

Sample introduction systems may be employed to introduce liquid samplesinto the ICP spectrometry instrumentation (e.g., an Inductively CoupledPlasma Mass Spectrometer (ICP/ICP-MS), an Inductively Coupled PlasmaAtomic Emission Spectrometer (ICP-AES), or the like) for analysis. Forexample, a sample introduction system may withdraw an aliquot of aliquid sample from a container and thereafter transport the aliquot to anebulizer that converts the aliquot into a polydisperse aerosol suitablefor ionization in plasma by the ICP spectrometry instrumentation. Theaerosol is then sorted in a spray chamber to remove the larger aerosolparticles. Upon leaving the spray chamber, the aerosol is introducedinto the plasma by a plasma torch assembly of the ICP-MS or ICP-AESinstruments for analysis.

SUMMARY

Systems and methods for automatic sampling of a sample for thedetermination of chemical element concentrations and control ofsemiconductor processes are described. A system embodiment includes aremote sampling system configured to collect a sample of phosphoric acidat a first location, the remote sampling system including a remote valvehaving a holding loop coupled thereto; and an analysis system configuredfor positioning at a second location remote from the first location, theanalysis system coupled to the remote valve via a transfer line, theanalysis system including an analysis device configured to determine aconcentration of one or more components of the sample of phosphoric acidand including a sample pump at the second location configured tointroduce the sample from the holding loop into the transfer line foranalysis by the analysis device.

This Summary is provided to introduce a selection of concepts in asimplified form that are further described below in the DetailedDescription. This Summary is not intended to identify key features oressential features of the claimed subject matter, nor is it intended tobe used as an aid in determining the scope of the claimed subjectmatter.

DRAWINGS

The detailed description is described with reference to the accompanyingfigures. In the figures, the use of the same reference numbers indifferent instances in the description and the figures may indicatesimilar or identical items.

FIG. 1 is a schematic illustration of a remote analysis system forautomatic analysis of chemical element concentrations in accordance withexample implementations of the present disclosure.

FIG. 2 is a schematic illustration of a system for automatic sampling ofhot phosphoric acid and analysis of chemical element concentrations inthe phosphoric acid via remote dilution of the sample in accordance withexample implementations of the present disclosure.

FIG. 3A is a schematic illustration of a controlled sample transfer linehaving a thermal sheath in accordance with example implementations ofthe present disclosure.

FIG. 3B is a cross-sectional view of the controlled sample transfer linehaving a thermal sheath of FIG. 3A in accordance with exampleimplementations of the present disclosure.

FIG. 4 is a schematic illustration of a plurality of controlled sampletransfer lines each having a thermal sheath in accordance with exampleimplementations of the present disclosure.

FIG. 5 is a schematic illustration of a control protocol of an etchingsystem via one or more outputs of a remote analysis system for automaticanalysis of chemical element concentrations in accordance with exampleimplementations of the present disclosure.

DETAILED DESCRIPTION

Referring to FIGS. 1-5, systems and methods for automatic sampling of asample (e.g., hot phosphoric acid) for the determination of chemicalelement concentrations and control of semiconductor processes aredescribed. For semiconductor fabrication, certain etching techniques canbe utilized to chemically remove layers of a semiconducting wafer withprecise control. For example, with nitride semiconducting wafers, thenitride film can be precisely etched without damaging the othercomponents or layers. Such etching can be facilitated by a wet etchingprocess using hot phosphoric acid (e.g., phosphoric acid (H₃PO₄) havinga temperature from about 150° C. to about 180° C.), where the etch rateis dependent upon the concentration of silicon in the hot phosphoricacid. Control of the timing of the etching processes can thereforedepend on precise control of the amount of silicon in the phosphoricacid. Too much silicon in the phosphoric acid can substantially slow oressentially stop the etch rate, whereas too little silicon in thephosphoric acid can cause the etch rate to be too fast, potentiallydamaging the device being fabricated. Further, the concentration ofsilicon in the hot phosphoric acid can change over time, since theetching process itself adds silicon to the phosphoric acid bath, therebyaltering the silicon concentration.

Accordingly, the present disclosure is directed to systems and methodsfor automatic sampling of hot phosphoric acid for the determination ofchemical element concentrations and control of semiconductor processes.In implementations, the systems and methods include sampling andanalyzing hot phosphoric acid for accurate determination ofconcentrations of metals (e.g., silicon, tungsten, copper, titanium,etc.) and non-metals using one or more of remote dilution of the hotphosphoric acid sample or heated transfer of the hot phosphoric acidsample. The sample can be transferred from a remote sampling site at afirst location to a centralized analyzer system having an ICP or ICP-MSdetector at a second location for the determination of chemical elementconcentrations. In implementations, the system includes a pump system todilute samples (e.g., hot phosphoric acid samples) at the first locationprior to transfer and analysis by the analyzer system. The dilution caninclude dilutions from about five-fold dilution to about twenty-folddilution. In implementations, the dilution factor can be lower (e.g.,lower than five-fold dilution) or higher (e.g., up to aboutone-hundred-fold dilution). Further, the systems and methods can includedetermination of the chemical element concentrations, reporting of thechemical element concentration data (e.g., via one or morecommunications protocols), and automatic control of semiconductorprocessing conditions based upon the chemical element concentration data(e.g., feedback responsive control of hot phosphoric acid relative tonitride etching).

In the following discussion, example implementations of techniques forautomatic sampling of hot phosphoric acid for the determination ofchemical element concentrations and control of semiconductor processesare presented.

Example Implementations

Referring generally to FIGS. 1 through 5, example systems configured toanalyze samples transported from a remote sampling site at a firstlocation over one or more distances to a centralized analyzer system ata second location are described. In implementations, the samples includehot phosphoric acid used for semiconductor manufacturing processes,including chemical etching processes for silicon (e.g., nitride wetetching). During such processing, the hot phosphoric acid at a samplepoint of the remote sampling site can exceed 150° C., for example, thehot phosphoric acid can be maintained from about 150° C. to about 180°C. Temperatures higher than about 165° C. can result in faster etchingor removal of silicon nitride (e.g., Si₃N₄), but lower selectivity tosilicon oxides (e.g., SiO₂) and silicon. A system 100 includes ananalysis system 102 at a first location. The system 100 also includesone or more remote sampling systems 104 at a second location remote fromthe first location. The system 100 can also include one or more remotesampling system(s) 104 at a third location, a fourth location, and soforth, where the third location and/or the fourth location are remotefrom the first location. In some embodiments, the system 100 also mayinclude one or more sampling system(s) at the first location (e.g.,proximate to the analysis system 102). For example, a sampling system atthe first location may include a sampling device 132 coupled with theanalysis system 102. The one or more remote sampling systems 104 can beoperable to receive samples from the second location, the thirdlocation, the fourth location, and so forth, and the system 100 can beoperable to deliver the samples from the one or more remote samplingsystems 104 to the analysis system 102 for analysis. For example, theone or more remote sampling systems 104 can include an autosampler orother sampling device configured to draw a sample from a sampling siteinto the system 100, such as through aspiration, pump operation (e.g.,syringe pump, peristaltic pump, etc.), or the like.

A remote sampling system 104 can be configured to receive a sample 112from a sampling site and prepare the sample 112 for delivery and/oranalysis. In embodiments, the remote sampling system 104 can be disposedvarious distances from the analysis system 102 (e.g., 1 m, 5 m, 10 m, 50m, 100 m, 1000 m, etc. between the first location and the secondlocation). In implementations, the remote sampling system 104 caninclude a remote sampling device 106 and a sample preparation device108. The sample preparation device 108 may further include a valve 110,such as a multi-port flow-through valve, to facilitate introduction ofone or more of carrier fluids, diluents, standards, or other fluids tothe remote sampling system 104. In implementations, the remote samplingdevice 106 can include a device configured for collecting a sample 112from a sample stream (e.g., a liquid, such as hot phosphoric acid,etc.), such as a sample probe in fluid communication with a vacuumsource, pump, or the like. The remote sampling device 106 can includecomponents, such as pumps, valves, tubing, sensors, etc., to facilitatesampling collecting operations, such as timing of sample collection,volume of sample collection, or the like.

The sample preparation device 108 can include a device configured toprepare a sample 112 collected from the remote sampling device 106 foranalysis via introduction with one or more of a diluent, an internalstandard, a carrier, or other fluid, solution, mixture, or the like. Inimplementations, the diluent, carrier, standard, or other fluid,solution, or mixture can be provided via one or more pumps associatedwith the first location (e.g., from the analysis system 102) remote fromthe sampling site. As such, the diluent, carrier, standard, or otherfluid, solution, or mixture can remain separated from the secondlocation, third location, fourth location, etc. until a sample is drawnat the respective sampling location at which time the pumps associatedwith the first location can deliver the appropriate fluids to therespective sampling location for preparation of the sample for transitfrom the respective sampling location to the first location. Forinstance, as shown in FIG. 2, the sample 112 can be collected from asemiconductor fabrication process, such as from a hot phosphoric acidetching system 50. The sample 112 can be collected from an acid bath 52of the etching system 50, from a portion of a recirculation line 54(e.g., downstream of a filter 56 of the recirculation line 54), or froma combination of sources from the etching system 50, where the hotphosphoric acid is maintained at a temperature from about 150° C. toabout 180° C. (e.g., to maintain a relatively low viscosity tofacilitate etching, transport, filtering, and the like). In animplementation, the hot phosphoric acid is a concentrated phosphoricacid (e.g., about 85% H₃PO₄). The sample 112 is transferred from theremote sampling system 104 to the analysis system 102 via one or more ofremote dilution of the hot phosphoric acid sample at the sampling site(e.g., second location) or thermally-controlled transfer of the hotphosphoric acid sample between the sampling site and the first locationto permit flow of the phosphoric acid. In implementations, the remotedilution and/or the thermally-controlled transfer facilitates transferof the phosphoric acid sample through the relatively small fluid flowpassageways of the tubing, valves, etc. of the system 100. For example,in an implementation, the system 100 includes tubes, valve ports, or thelike having internal diameters from about 0.15 mm to about 2.0 mm.

Remote Dilution

Referring to FIG. 2, the system 100 is shown in an implementation withremote dilution of the sample 112 prior to transferring the sample 112from the second location (e.g., proximate the etching system 50) to thefirst location (e.g., proximate the analysis system 102). The analysissystem 102 includes a plurality of pumps (e.g., syringe pumps 114, 116,118, 120) which deliver carrier, diluent, and optionally one or morestandard spikes to the valve 110 of the sample preparation device 108 ofthe remote sampling system 104. For example, as shown, the analysissystem 102 includes a carrier pump 114 configured to supply carrier tothe valve 110 (e.g., via carrier line 115), a diluent pump 116configured to supply diluent to the valve 110 (e.g., via diluent line117), a standard pump 118 configured to supply a standard spike to thevalve 110 (as desired, via standard line 119), and a sample pump 120configured to draw sample 112 from the etching system 50 into the remotesampling system 104. Alternatively, the system 100 can take the sample112 from the etching system 50 via one or more of a pressure supplied bythe etching system 50 (e.g., via a chemical recirculation flow of aworking fluid, such as phosphoric acid) or via a remote sample pump 121coupled to the valve 110 to pull the sample 112 from the etching system50 into the remote sampling system 104. In implementations, prior toentry into the valve 110, the sample 112 is cooled (e.g., via aconcentric circulation system, a thermo-electric device, or the like) tocontrol the sample temperature. For example, with hot phosphoric acid,the temperature of the phosphoric acid may be cooled to a temperaturefrom about 30° C. to about 100° C. before being introduced to the valve110. Such temperatures can avoid damaging the valve system (e.g., afluoropolymer valve system) while preventing formation of sample gels orhaving highly viscous concentrated phosphoric acid interfering with thesampling process.

When the sample 112 is collected from the etching system 50 (e.g., viasyringe pump 120, remote sample pump 121, etching system 50 pressure,etc.), the sample 112 can be directed into the valve 110 with the valve110 in a sampling configuration, where the sample 112 is directed into aholding loop 122. The valve 110 can then switch configurations to atransfer configuration, where the carrier pump 114, the diluent pump116, and the standard pump 118 operate to provide one or more ofcarrier, diluent, and standard to the valve 110. The system 100 providesinline dilution of the sample 112 when the diluent pump 116 operates tosupply diluent fluid to the valve 110 via diluent line 117, whereby thediluent fluid can mix with the sample inline (e.g., via the mixing portof the valve 110, downstream of the valve 110, or the like). Similarly,the introduction of standard to the sample occurs via inlineintroduction of the standard to the sample at the valve 110 viaoperation of the standard pump 118. In an implementation, the amount ofcarrier, diluent, and standard provided to the valve 110 is determinedanalytically (e.g., via a controller in the analysis system 102), suchas to provide automatic calibration or inline dilution of the sample112, which can be based on a user-input, a quality control parameterbased on the etching system 50, or a combination thereof. For example,in implementations the system 100 automatically calibrates the analysissystem 102 in the sample matrix (e.g., phosphoric acid matrix, method ofstandard addition (MSA) spike, etc.) or adds internal standard foraccurate measurements.

The sample 112 is then transferred from the holding loop 122 into atransfer line 124 (which in implementations involves dilution orstandard addition via a mixing port of the valve 110 coupled with thetransfer line 124), where the transfer line 124 is coupled between thevalve 110 of the remote sampling system 104 and the analysis system 102.For example, in an implementation the transfer line 124 is coupledbetween the valve 110 of the remote sampling system 104 and a localsample valve 126 of the analysis system 102 (e.g., in a sample receiveconfiguration), where excess fluid can be purged to waste 136. The localsample valve 126 can be a multi-position valve in fluid communicationwith one or more additional pumps 134 (e.g., syringe set(s)) of theanalysis system 102 for transfer of fluids between the valve 110 and thelocal sample valve 126 (e.g., through the transfer line 124), from thelocal sample valve 126 to the analysis device 128, for rinse or cleaningprocedures, and so forth. The local sample valve 126 can switch from thesample receive configuration to a sample deliver configuration where thesample is delivered to the analysis device 128. For example, when in thesample deliver configuration, the carrier (supplied via one or more ofthe carrier pump 112 or pump 134) delivers the diluted sample (which canalso include a standard spike) to a nebulizer of an ICP analyzer of theanalysis device 128. In an implantation, the standard pump 120 pushesthe diluted sample from the valve 110 through the transfer line 124 tothe local sample valve 126. In implementations, the sample delivery tothe analysis device 128 is preceded by a rinse procedure of the analysisdevice 128.

Thermally-Controlled Transfer

Referring to FIGS. 3A and 3B, the system 100 includes a thermal sheath300 to facilitate a temperature controlled transfer line 124 between theremote sampling system 104 and the analysis system 102 in accordancewith example implementations of the present disclosure. The temperatureof the sample can be controlled to facilitate or enable transfer betweenthe remote sampling system 104 and the analysis system 102. For example,with hot phosphoric acid, the thermal sheath 300 can cool or maintainthe phosphoric acid at a temperature from about 30° C. to about 100° C.during delivery through the transfer line 124. Such temperatures canavoid damaging valves of the system 100 while preventing formation ofsample gels and/or preventing highly viscous concentrated phosphoricacid interfering with the transfer process through the transfer line124. Further, by controlling the viscosity of the sample within thetransfer line 124, the system 100 can avoid introducing impurities tothe sample 112 via extraction of impurities from the valve 110, such aswhen the sample fluid is too viscous.

In an implementation, the thermal sheath 300 facilitates temperaturecontrol via a recirculating fluid in contact with the transfer line 124,but not in contact with the sample 112 therein. For example, as shown inFIG. 3B, the thermal sheath 300 and the transfer line 124 can formconcentric tubes with the transfer line 124 in an interior region andwith the thermal sheath 300 surrounding the transfer line 124. A fluid302 (e.g., a temperature-regulated recirculating fluid) can flow throughan annular region 304 surrounding the transfer line 124 to facilitatetemperature control of the sample 112 within the transfer line 124. Inan implementation, the fluid 302 within the thermal sheath 300 is waterat a temperature of from about 50° C. to about 100° C., which can berecirculated and controlled to maintain an accurate temperature tothermally regulate the temperature of the sample 112 within the transferline 124. In an implementation, one or more of the carrier line 115, thediluent line 117, or the standard line 119 is located in the annularregion 304 of the thermal sheath 300. Such a configuration canfacilitate temperature control of the carrier, diluent, and standardprior to introducing the carrier, diluent, and standard to the sample112 at the remote valve 110, which can provide precise dilution factors,mixing conditions, or the like. In an implementation, one or more of thecarrier line 115, the diluent line 117, or the standard line 119 issupported by a separate sheath (which can optionally bethermally-regulated) than the thermal sheath.

In an implementation, the thermal sheath 300 facilitates temperaturecontrol via a thermally conductive medium in thermal contact with thetransfer line 124. For example, the thermal sheath 300 can include athermally conductive material (e.g., a ceramic material, a metallicmaterial, a combination of a ceramic and a metal, etc.) in contact withor in close proximity to the transfer line 124 to thermally regulate thetemperature of the sample 112 flowing within the transfer line 124. Thetemperature of the thermal sheath 300 is controlled to thereby controlthe temperature of the sample 112 flowing within the transfer line 124.For example, the thermal sheath 300 can be in contact with arecirculating fluid to thermally regulate the thermal sheath 300, thethermal sheath 300 can be coupled with a thermal electric device tothermally regulate the thermal sheath 300, or a combination thereof.

In implementations, the analysis system 102 includes a local sample loop130 coupled to the local sample valve 126 for holding the sample 112received from the thermally regulated transfer line 124, such as tofacilitate automatic dilution or calibration of the sample 112 at theanalysis system 102 prior to analysis by the analysis device 128.Further, in implementations, the analysis system 102 may include asampling device 132 configured to collect a sample 112 that is local tothe analysis system 102.

In implementations, the analysis system 102 is coupled to a plurality ofremote sampling systems 104. For example the local sample valve 126 vanbe configured as a multi-position valve in fluid communication with aplurality of remote sampling valves 110 via a plurality of thermallyregulated transfer lines 124 (e.g., the transfer line 124 isthermally-regulated via thermal sheath 300). For example, as shown inFIG. 4, the local sample valve 126 is positioned at a first location(e.g., proximate to the analysis system 102) and is coupled with a firstremote sample valve 110 a at a second location via a firstthermally-regulated transfer line 124 a with thermal sheath 300 a, iscoupled with a second remote sample valve 110 b at a third location viaa second thermally-regulated transfer line 124 b with thermal sheath 300b, and is coupled with a third remote sample valve 110 c at a fourthlocation via a second thermally-regulated transfer line 124 c withthermal sheath 300 c. Each of the plurality of remote sampling valves(e.g., 110 a, 110 b, and 110 c) are configured to receive a sample fromrespective etching systems (50 a, 50 b, and 50 c) to provide a pluralityof samples for analysis by the analysis system 102. While three samplesystems are shown, it is contemplated that fewer sample systems or moresample systems can be present for analysis by the system 100. As such,the system 100 can be configured to hold multiple prepped samples foranalysis to provide a high throughput system capable of multiple samplescollected from multiple remote locations.

Control of Silicon Fabrication Process Conditions

In implementations, analysis of the sample 112 by the analysis system102 can result in data for automatic control of one or more processdevices of the etching system 50. Referring to FIG. 5, the analysissystem 102 is communicatively coupled to the etching system 50, wherebythe data provided by the analysis system 102 can facilitate automaticcontrol of one or more process devices of the etching system 50. Forexample, the analysis system 102 can report concentration data of one ormore elements (e.g., silicon, tungsten, copper, titanium, etc.), organicspecies, inorganic species, or the like via one or more communicationsprotocols to provide a control signal to automatically manipulate acontrol device of the etching system 50, including but not limited to, arecirculation pump 500 (or controller thereof) to control a rate ofrecirculation of the working fluid (e.g., phosphoric acid) in therecirculation line 54, a heater 502 (or controller thereof) to control atemperature of the bath 52, a pump 504 (or controller thereof) tocontrol the rate at which fresh phosphoric acid is provided to the acidbath 52, or so forth. For instance, in an implementation, feedback isprovided from the system 100 to a wetbench system (e.g., etching system50) to automatically control the addition of fresh phosphoric acid todilute silicon concentrations within the acid bath 52 to desiredconcentration levels (e.g., within about 50 ppm Si). Further, the system100 can utilize the concentration data to control a speed of productionof the etching system 50, since the production rate of the semiconductorproduct can be correlated with silicon concentration to determine a peakproduction rate based on silicon concentration of the acid bath 52.

For example, the system 100 can include a computing device including aprocessor and a memory. The processor provides processing functionalityfor the computing device and may include any number of processors,micro-controllers, or other processing systems, and resident or externalmemory for storing data and other information accessed or generated bythe computing device. The processor may execute one or more softwareprograms that implement the techniques and modules described herein. Theprocessor is not limited by the materials from which it is formed or theprocessing mechanisms employed therein and, as such, may be implementedvia semiconductor(s) and/or transistors (e.g., electronic integratedcircuits (ICs)), and so forth.

The memory is an example of device-readable storage media that providesstorage functionality to store various data associated with theoperation of the computing device, such as the software program and codesegments mentioned above, or other data to instruct the processor andother elements of the computing device to perform the techniquesdescribed herein. Although a single memory is mentioned above, a widevariety of types and combinations of memory may be employed. The memorymay be integral with the processor, stand-alone memory, or a combinationof both. The memory may include, for example, removable andnon-removable memory elements such as RAM, ROM, Flash (e.g., SD Card,mini-SD card, micro-SD Card), magnetic, optical, USB memory devices, andso forth. In embodiments of the computing device, the memory may includeremovable ICC (Integrated Circuit Card) memory such as provided by SIM(Subscriber Identity Module) cards, USIM (Universal Subscriber IdentityModule) cards, UICC (Universal Integrated Circuit Cards), and so on.

The computing device includes a display to display information to a userof the computing device. In embodiments, the display may comprise a CRT(Cathode Ray Tube) display, an LED (Light Emitting Diode) display, anOLED (Organic LED) display, an LCD (Liquid Crystal Diode) display, a TFT(Thin Film Transistor) LCD display, an LEP (Light Emitting Polymer) orPLED (Polymer Light Emitting Diode) display, and so forth, configured todisplay text and/or graphical information such as a graphical userinterface. The display may be backlit via a backlight such that it maybe viewed in the dark or other low-light environments.

The display may be provided with a touch screen to receive input (e.g.,data, commands, etc.) from a user. For example, a user may operate thecomputing device by touching the touch screen and/or by performinggestures on the touch screen. In some embodiments, the touch screen maybe a capacitive touch screen, a resistive touch screen, an infraredtouch screen, combinations thereof, and the like. The computing devicemay further include one or more input/output (I/O) devices (e.g., akeypad, buttons, a wireless input device, a thumbwheel input device, atrackstick input device, and so on). The I/O devices may include one ormore audio I/O devices, such as a microphone, speakers, and so on.

The computing device may also include a communication modulerepresentative of communication functionality to permit computing deviceto send/receive data between different devices (e.g.,components/peripherals) and/or over one or more networks. Communicationmodule may be representative of a variety of communication componentsand functionality including, but not necessarily limited to: a browser;a transmitter and/or receiver; data ports; software interfaces anddrivers; networking interfaces; data processing components; and soforth.

The one or more networks are representative of a variety of differentcommunication pathways and network connections which may be employed,individually or in combinations, to communicate among the components ofthe system 100 and/or of the etching system 50. Thus, the one or morenetworks may be representative of communication pathways achieved usinga single network or multiple networks. Further, the one or more networksare representative of a variety of different types of networks andconnections that are contemplated including, but not necessarily limitedto: the Internet; an intranet; a Personal Area Network (PAN); a LocalArea Network (LAN) (e.g., Ethernet); a Wide Area Network (WAN); asatellite network; a cellular network; a mobile data network; wiredand/or wireless connections; and so forth.

Examples of wireless networks include, but are not necessarily limitedto: networks configured for communications according to: one or morestandard of the Institute of Electrical and Electronics Engineers(IEEE), such as 802.11 or 802.16 (Wi-Max) standards; Wi-Fi standardspromulgated by the Wi-Fi Alliance; Bluetooth standards promulgated bythe Bluetooth Special Interest Group; and so on. Wired communicationsare also contemplated such as through Universal Serial Bus (USB),Ethernet, serial connections, and so forth.

The computing device is described as including a user interface, whichis storable in memory and executable by the processor. The userinterface is representative of functionality to control the display ofinformation and data to the user of the computing device via thedisplay. In some implementations, the display may not be integrated intothe computing device and may instead be connected externally usinguniversal serial bus (USB), Ethernet, serial connections, and so forth.The user interface may provide functionality to allow the user tointeract with one or more applications of the computing device byproviding inputs (e.g., sample identities, desired dilution factors,spiking protocols, etc.) via the touch screen and/or the I/O devices.For example, the user interface may cause an application programminginterface (API) to be generated to expose functionality to a dilution ortemperature control module to configure the application for display bythe display or in combination with another display. In embodiments, theAPI may further expose functionality to configure an inline dilutioncontrol module, an etching process control module, or a combinationthereof, to allow the user to interact with an application by providinginputs via the touch screen and/or the I/O devices to provide desireddilution factors for analysis.

The inline dilution control module and/or the etching process controlmodule may comprise software, which is storable in memory and executableby the processor, to perform a specific operation or group of operationsto furnish functionality to the computing device. The inline dilutioncontrol module provides functionality to control the dilution of, forexample, an internal standard and/or the samples from the remotesampling system 104. For example, the inline dilution control module maycontrol amounts of the carrier and/or the diluent that are supplied byone or more pumps of the system. The etching process control moduleprovides functionality to control one or more process conditions ordevices of the etching system 50, such as to control the concentrationof one or more chemical elements present in a working fluid of theetching system. For example, the etching process control module maycontrol the pump rate of hot phosphoric acid to the acid bath 52,control a temperature of the acid bath 52, a pump rate of freshphosphoric acid provided to the acid bath 52, or so forth, or provide acontrolled concentration of a chemical element (e.g., silicon) therein.

In implementations, the user interface may include a browser (e.g., forimplementing functionality of the control modules described herein). Thebrowser enables the computing device to display and interact withcontent such as a webpage within the World Wide Web, a webpage providedby a web server in a private network, and so forth. The browser may beconfigured in a variety of ways. For example, the browser may beconfigured as an inline dilution control module or etching processcontrol module accessed by the user interface. The browser may be a webbrowser suitable for use by a full resource device with substantialmemory and processor resources (e.g., a smart phone, a personal digitalassistant (PDA), etc.).

Generally, any of the functions described herein can be implementedusing software, firmware, hardware (e.g., fixed logic circuitry), manualprocessing, or a combination of these implementations. The terms“module” and “functionality” as used herein generally representsoftware, firmware, hardware, or a combination thereof. Thecommunication between modules in the system 100, for example, can bewired, wireless, or some combination thereof. In the case of a softwareimplementation, for instance, a module may represent executableinstructions that perform specified tasks when executed on a processor,such as the processor described herein. The program code can be storedin one or more device-readable storage media, an example of which is thememory associated with the computing device.

CONCLUSION

Although the subject matter has been described in language specific tostructural features and/or process operations, it is to be understoodthat the subject matter defined in the appended claims is notnecessarily limited to the specific features or acts described above.Rather, the specific features and acts described above are disclosed asexample forms of implementing the claims.

What is claimed is:
 1. A system comprising: a remote sampling systemconfigured to collect a sample of phosphoric acid at a first location,the remote sampling system including a remote valve having a holdingloop coupled thereto; and an analysis system configured for positioningat a second location remote from the first location, the analysis systemcoupled to the remote valve via a transfer line, the analysis systemincluding an analysis device configured to determine a concentration ofone or more components of the sample of phosphoric acid and including asample pump at the second location configured to introduce the samplefrom the holding loop into the transfer line for analysis by theanalysis device.
 2. The system of claim 1, wherein the sample ofphosphoric acid has a temperature from about 150° C. to about 180° C. atthe first location.
 3. The system of claim 1, wherein the analysissystem further includes a local sample valve coupled to the remote valvevia the transfer line and coupled to the analysis device.
 4. The systemof claim 1, further comprising: a thermal sheath surrounding at least aportion of the transfer line.
 5. The system of claim 4, wherein thethermal sheath includes a temperature-regulated fluid in an annularregion between the thermal sheath and the transfer line.
 6. The systemof claim 1, wherein the analysis system includes at least one of acarrier pump coupled to the remote valve via a carrier fluid line, adiluent pump coupled to the remote valve via a diluent fluid line, or astandard pump coupled to the remote valve via a standard fluid line. 7.The system of claim 6, further comprising: a thermal sheath surroundingat least a portion of the transfer line and at least one of the carrierfluid line, the diluent fluid line, or the standard fluid line.
 8. Thesystem of claim 7, wherein the thermal sheath includes atemperature-regulated fluid in an annular region between the thermalsheath and the transfer line.
 9. The system of claim 7, wherein the atleast one of the carrier fluid line, the diluent fluid line, or thestandard fluid line is positioned in an annular region between thethermal sheath and the transfer line.
 10. The system of claim 1, furtherincluding a communicative coupling, the communicative couplingconfigured to provide a control signal between the analysis system andone or more of a heater of a phosphoric acid etching system at the firstlocation, a recirculation pump configured to recirculate phosphoric acidof the phosphoric acid etching system, or a pump configured to introducefresh phosphoric acid to the phosphoric acid etching system.
 11. Thesystem of claim 10, wherein the control signal is based on theconcentration of one or more components of the sample of phosphoric aciddetermined by the analysis system.
 12. The system of claim 10, whereinthe control signal is configured to maintain a silicon concentration inthe phosphoric acid etching system of about 50 ppm.
 13. A method,comprising: receiving a sample of phosphoric acid at a first locationwith a remote sampling system; introducing the sample of phosphoric acidinto a holding loop of the remote sampling system via operation of apump positioned at a second location remote from the first location or alocal sample pump positioned at the first location; introducing at leastone of a carrier fluid, a diluent fluid, or a standard fluid to thesample of phosphoric acid at the remote sampling system; transferringthe sample of phosphoric acid from the remote sampling system through atransfer line to the second location via operation of a second pumppositioned at the second location; and determining a concentration of achemical element in the sample of phosphoric acid via an analysis deviceat the second location.
 14. The method of claim 13, wherein the sampleof phosphoric acid has a temperature from about 150° C. to about 180° C.at the first location.
 15. The method of claim 13, further comprising:controlling a temperature of the sample of phosphoric acid during thestep of transferring the sample of phosphoric acid from the remotesampling system through the transfer line to the second location viaoperation of the second pump positioned at the second location.
 16. Themethod of claim 15, wherein controlling a temperature of the sample ofphosphoric acid includes transferring the sample of phosphoric acid fromthe remote sampling system through the transfer line, wherein thetransfer line is positioned concentrically within a thermal sheath. 17.The method of claim 16, wherein at least one of a carrier fluid line, adiluent fluid line, or a standard fluid line is positioned in a regionbetween the transfer line and the thermal sheath.
 18. The method ofclaim 15, wherein controlling the temperature of the sample ofphosphoric acid during the step of transferring the sample of phosphoricacid includes at least one of cooling the sample of phosphoric acid to,or maintaining the sample of phosphoric acid at, a temperature fromabout 30° C. to about 100° C.
 19. The method of claim 13, furthercomprising: providing a control signal to one or more of a heater of aphosphoric acid etching system at the first location, a recirculationpump configured to recirculate phosphoric acid of the phosphoric acidetching system, or a pump configured to introduce fresh phosphoric acidto the phosphoric acid etching system, the control signal based on theconcentration of the chemical element in the sample of phosphoric aciddetermined via the analysis device at the second location.
 20. Themethod of claim 19, wherein the control signal is configured to maintaina silicon concentration in the phosphoric acid etching system of about50 ppm.